주메뉴 바로가기 본문내용 바로가기 사이트정보 바로가기

물리학과

메뉴

학술세미나

제목 - 설명

안녕하세요.

물리학과입니다.

2023학년도 2학기  자연과학연구소 전문가초청 세미나를 안내해 드립니다.
 
 
내용:
 
•연사: 최성균 교수 (성균관대학교)
 
•일시: 11월 2일 목요일 오후 4시 30분
 
•장소: 베어드홀 103호
 
•제목: Archetypical insulator-metal transitions in strongly correlated electron systems, NiS(2-x)Se(x)
 
•초록: In this colloquium, we present our recent results on novel insulator-metal transitions in strongly correlated electron systems,  NiS(2-x)Se(x). We will begin with key concepts in condensed matter physics, followed by the insulator-metal transition that reveals a massive change in the resistivity regarding external perturbation, such as temperature, doping, pressure, and fields.

This subject has been actively studied for decades, aiming to develop next-generation novel applications. Also, the insulator-metal transition is a central concept in condensed matter physics as it is closely related to various important phenomena, ranging from high-temperature superconductivity, colossal magnetoresistance, to insulating states in Van der Waals materials more recently.
Thus, it is significant in finding the actual material that shows the electronic transition without a structural and magnetic transition, by understanding electronic phases and their transitions via insulator-metal transitions. However, to our knowledge, the originally-proposed electronic transition in theory by Mott in 1949 is not clearly confirmed in any real solids yet.
Here, we present such experimental evidence. Via comprehensive x-ray diffraction, resistivity, magnetic susceptibility, heat capacity, Raman scattering, and muon spin relaxation measurements on NiS(2-x)Se(x), we map out an accurate phase diagram based on the real Se doping to date. Key experimental findings are well reproduced by our dynamical mean-field theory calculations, providing comprehensive microscopic understandings of the competing electronic and magnetic phases and their transitions. Our results provide a crystal clear model for the pure Mott transition in crystalline arrays with theoretical explanations, which could facilitate a novel application, such as ultra-fast switching electronic devices in the future.

 
많은 참여를 부탁드립니다.
 

 

상단으로 이동