Molecular- and polymer-based electronic devices
Idea of utilizing individual molecules as the electronic components in future ultrahigh-density electronic devices has generated tremendous attention. Obtaining transistor action from molecular orbital control has been the outstanding challenge of the field of molecular electronics nearly since its inception. In this talk, I will explain a direct electrostatic modulation of orbitals in a molecular transistor configuration, with both effective gate control and enhanced resonant coupling of the orbitals to the source and drain electrodes [1]. I will also explain recently developed understanding on the electrical transport characteristics through various types of molecular junctions on flat or flexible substrates [2]. In the second part of this talk, I will present a summary on general characteristics of the materials, device structures, and switching mechanisms used in organic resistive non-volatile memory devices. Strategies for performance enhancement, integration, and advanced architectures in these devices will be presented [3]. And, if time is allowed, I will briefly discuss other research results on nanoscale logic circuits and 2-D atomic film (MoS2)-based electronic devices [4].
Figure. (Left) SEM images and schematic of a molecular transistor. (Right) Cross-sectional TEM image and schematic of 3-dimensionally stacked organic resistive memory devices.
References:
[1] Nature 462, 1039 (2009), Adv. Mater. 23, 1583 (2011)-review.
[2] Nature Nanotechnology 7, 438 (2012), Nano Lett. 13, 1822 (2013), Adv. Mater. 25, 4845 (2013)-review, J. Mater. Chem. 21, 18117 (2011)-review, Adv. Mater. 23, 755 (2011)
[3] Adv. Funct. Mater. 21, 2806 (2011)-review, Adv. Mater. 23, 2104 (2011), ACS Nano, 5, 5995 (2011), Adv. Mater. 22, 5048 (2010), Adv. Mater. 22, 3071 (2010), Adv. Mater. 22, 1228 (2010), Adv. Mater. 21, 2497 (2009).
[4] ACS Nano, 7, 7751 (2013), Nanotechnology, 24, 095202 (2013).
* 일시 : 2013년 11월 21일 목요일 오후 4시 30분
* 장소 : 베어드홀 102호
* 연사 : 이 탁 희 교수 (서울대 천체물리학과)